EN
RU
AR
CS
DA
NL
FR
DE
EL
IT
JA
KO
PL
PT
RO
ES
IW
SR
UK
HU
TR
FA
GA
BE
UZ
KU
LK-MAMPD-4 Multichannel High Speed Amplified Microwave Photodetector
- High Speed，Wide Bandwidth
- Incorporated Bias-T
- O/E Hybrid Integrated
- High Gain, Low Noise, Broadband
- Hermetically Sealed, SMA Connector
- Low Dark Current，high signal-to-noise ratio.
- Small Form Factor.
Product Description
LK-MAMPD-4 is a state-of-the-art optoelectronic hybrid system, integrating a broadband Indium Gallium Arsenide (InGaAs) photodiode with a low-noise amplifier. This photodiode is characterized by a spectral response wavelength range from 1000 to 1650 nanometers. The low-noise amplifier within the system offers a Radio Frequency (RF) gain of 15 decibels, ensuring signal integrity and amplification.
LK-MAMPD-4 is capable of providing bandwidths of 12 gigahertz and 18 gigahertz, catering to a variety of high-speed communication and detection requirements. The module is designed to operate on a +5-volt supply voltage, which is standard in many electronic systems. It is compatible with standard single-mode 9/125-micrometer optical fibers, ensuring seamless integration with existing fiber optic networks. The RF output port features an SMP-compatible connector, which is impedance-matched to 50 ohms for optimal signal transmission and minimal signal loss.
LK-MAMPD-4 is constructed with a hermetic sealing process, which provides robust protection against environmental factors, enhancing its durability and reliability. It has a compact form factor, weighing in at less than 62 grams, which is advantageous for applications where weight is a consideration. The module is certified to comply with the Restriction of Hazardous Substances (RoHS) Directive 2.0, confirming its adherence to stringent environmental and safety standards.
Technical Specifications
| Typical & Absolute Maximum Rating | ||||
|---|---|---|---|---|
| Parameter | Sym. | Typ | Rating | Unit |
| Storage temperature range | TSTG | -45 ～ +85 | -55 ～ +100 | ℃ |
| Operating case temperature range | TC | 25 | -40 ～ +85 | ℃ |
| Bias Voltage | VR | +5 | +5 ～ +9 | V |
| Optical Input Power | Pin | 0 | +10 | dBm |
| Burn-out Optical Power | PB | - | +13 | dBm |
| Lead soldering temperature | Tp | 280（10s） | 330（10s） | ℃ |
| Electrical / Optical Characteristics ( TC = 22 ± 3 ℃ ) | ||||||
|---|---|---|---|---|---|---|
| Parameter | Sym | Test Condition | Parameter Values | Unit | ||
| Wavelength Range | λ | － | 1000 ～ 1650 | nm | ||
| Frequency Range | － | － | X - Band | Ku - Band | － | |
| Small Signal Bandwidth | f-3dB | TC = 22 ± 3℃ | 0.3 ～ 12 | 2 ～ 18 | GHz | |
| Responsivity | Re | VR =+5V, Pin =10mW | λ = 1310 nm | ≥ 0.8 | ≥ 0.85 | A/W |
| λ = 1550 nm | ≥ 0.85 | ≥ 0.8 | ||||
| Amplitude Flatness | A | TC =-45～+85 ℃ | ≤ ± 2 | dB | ||
| Saturation Optical Power | Ps | VR =+ 5 V, λ = 1550 nm AC Modulated | 10 | dBm | ||
| RF Signal Gain（Typical） | G | － | 15 ± 1 | dB | ||
| Saturation RF Output Power | Pout | － | +3 | dBm | ||
| Output VSWR | VSWR | － | ≤ 2 | － | ||
| Output Impedance | RL | － | 50 | Ω | ||
● Typical Response Curves
（ Fig. 1 X - Band Photodetector Frequency Response）
（ Fig. 2 Ku - Band Photodetector Frequency Response）
● Dimension and Pins ( Unit: mm[inch] )
RF Connector：SMP
● Ordering Information
Sheet 1：
| Code | Analog Bandwidth |
| X | 0.2 ～ 12 GHz |
| Ku | 2 ～ 18 GHz |
Sheet 2：
| Code | Connector Type | Remark |
| N | No Connector | Single-mode 9 / 125 μm fiber pigtail |
| A | FC / APC | |
| P | FC / PC |
● Precautions
The fiber bending radius no less than 20 mm for avoiding fiber damaged.
Be sure the fiber coupling facet is clean before connecting it to opto-circuit.
The suitable ESD protection is required in storage, transportation and using.
All of our standard photodetectors can be customized into modules！
Applications
Radar Information Processing
Electronic Warfare
Antenna Measurement
Fiber Optic Communications
Security and Surveillance
