Products

LK-NY15D 1550nm Microwave DFB Laser Module

Direct Modulation Capability
High-Dynamic-Range
18 GHz Bandwidth
Low threshold current
High output power
7pin butterfly package with SMA connector
Operating case temperature: -40 to 70℃
Enhanced Reliability

INQUIRY

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Product Description

LK-NY15D laser is a high-performance, directly modulated Distributed Feedback (DFB) laser designed for broadband linear fiber optic communications. It serves as a superior substitute for coaxial cable systems when transmitting signals at 12 GHz or 18 GHz frequencies.

LK-NY15D enhances the reliability of microwave communication networks by conveying RF signals in their pristine form, which in turn markedly improves signal quality across a spectrum of applications such as antenna remoting, telemetry, timing and reference signal distribution, as well as measurement and delay lines.

This series of lasers features an integrated optical isolator, thermoelectric cooler (TEC), thermistor, laser diode chip, and a monitor photodiode, all of which are sealed in a robust 7-pin butterfly package to ensure hermetic protection and optimal performance.

Technical Specifications

Absolute Maximum Ratings
Parameter	Symbol	Min.	Max.	Unit
Laser diode forward current	I_f	-	120	mA
Laser diode reverse voltage	V	-	1	V
Front power	P_f	-	20	dBm
PD reverse voltage	V	-	15	V
Forward current (PD)	I_m	-	2	mA
Operation temperature	T_o	-40	+70	°C
Storage temperature	T_s	-55	+85	°C
Storage relative humdity	S_r	-	85	%

Optical and Electrical Specification (Tc=25°C)
Parameter	Symbol	Test Condition	Min	Typ	Max	Units	Note
Wavelength	λ	I_F = I_OP, T = T_OP	-	1550	-	nm
Frequency	-	X Option	0.1	-	12	GHz	-
Frequency	-	Ku option	1	-	18	GHz	-
Optical Output Power	P	I_F=I_op	-	10	-	mW	1
Thershold current	I_th	λ=1550nm	-	-	10	mA	-
Operation current	I_op	λ=1550nm	-	55	100	mA	-
Operation voltage	V_op	λ=1550nm	-	1.5	2.5	V	-
Slope efficiency	SE	-	0.2	-	-	W/A	-
Side-mode suppression ratio	SMSR	λ=1550nm, I_F=I_op	30	-	-	dB	-
Rative Intensity Noise	R_IN		-	-150	-130	dB/Hz	-
Bandwidth (-3dB, I=60mA)	S₂₁	X Option	-	12	-	GHz	-
Bandwidth (-3dB, I=60mA)	S₂₁	Ku option	-	18	-	GHz	-
Return loss	VSWR	X Option	-	-	2	dB	-
Return loss	VSWR	Ku option	-	-	2.2	dB	-
Input 1 dB Compression		-	15	-	-	dBm	-
Thermistor Resistance	R_th	@25°C	-	10	-	Kohm	-
TEC current	I_t	-	-	-	1.2	A	2
TEC voltage	V_t		-	-	2.5	V	2
Capacitance (PD)	C_t		-	-	20	pF	-
Monitoring current	I_m	-	0.10	-	2.0	mA	-
Dark current (PD)	I_d		-	-	50	nA	-

Notes:All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in.

1. Laser temperature set 25℃, bias current at 55mA

2. Operation case temperature -40~70℃

● Typical Data

(λ=1550nm, TC =25 ℃)