Products

LK-NY13D 1310nm Microwave DFB Laser Module

High-Dynamic-Range
18 GHz Bandwidth
Low threshold current
High output power
7pin butterfly package with SMA connector
Operating case temperature: -40 to 70℃
Enhanced Reliability

INQUIRY

+86 29 88244373

[email protected]

Product Description

LK-NY13D module is DFB laser which is directly modulated, offering superior performance for linear fiber optic communication systems with extensive bandwidth requirements. LK-NY13D lasers are superior choice over coaxial cable systems for the transmission of high-frequency signals such as 12 GHz or 18 GHz.

These lasers enhance the reliability of microwave communication networks by ensuring the RF signal is transmitted in its native form. Due to these attributes, LK-NY13D lasers significantly enhance signal quality across a broad spectrum of applications, include remote antenna systems, telemetry, distribution of timing and reference signals, as well as measurement and delay line applications.

LK-NY13D lasers come with integrated components such as an optical isolator, a thermoelectric cooler (TEC), a thermistor, a laser diode chip, and a monitor photodiode, all of which are sealed in a 7-pin butterfly package to ensure hermetic protection.

Technical Specifications

Absolute Maximum Ratings
Parameter	Symbol	Min.	Max.	Unit
Laser diode forward current	I_f	-	120	mA
Laser diode reverse voltage	V	-	1	V
Front power	P_f	-	20	dBm
PD reverse voltage	V	-	15	V
Forward current (PD)	I_m	-	2	mA
Operation temperature	T_o	-40	+70	°C
Storage temperature	T_s	-55	+85	°C
Storage relative humdity	S_r	-	85	%

Optical and Electrical Specification (Tc=25°C)
Parameter	Symbol	Test Condition	Min	Typ	Max	Units	Note
Wavelength	λ	I_F = I_OP, T = T_OP	-	1310	-	nm
Frequency	-	X Option	0.1	-	12	GHz	-
Frequency	-	Ku option	1	-	18	GHz	-
Optical Output Power	P	I_F=I_op	-	10	-	mW	1
Thershold current	I_th	λ=1310nm	-	-	10	mA	-
Operation current	I_op	λ=1310nm	-	55	100	mA	-
Operation voltage	V_op	λ=1310nm	-	1.5	2.5	V	-
Slope efficiency	SE	-	0.2	-	-	W/A	-
Side-mode suppression ratio	SMSR	λ=1310nm, I_F=I_op	30	-	-	dB	-
Relative Intensity Noise	R_IN	-	-	-	-130	dB/Hz	-
Bandwidth (-3dB, I=60mA)	S₂₁	X Option	-	12	-	GHz	-
Bandwidth (-3dB, I=60mA)	S₂₁	Ku option	-	18	-	GHz	-
Return loss（VSWR）	VSWR	X Option	-	-	2	dB	-
Return loss（VSWR）	VSWR	Ku option	-	-	2.2	dB	-
Input 1 dB Compression	-	-	15	-	-	dBm	-
Thermistor Resistance	R_th	@25℃	-	10	-	Kohm	-
TEC current	I_t	-	-	-	1.2	A	2
TEC voltage	V_t		-	-	2.5	V	2
Capacitance (PD)	C_t		-	-	20	pF	-
Monitoring current	I_m	-	0.10	-	2.0	mA	-
Dark current (PD)	I_d		-	-	50	nA	-

Notes: All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in.

1. Laser temperature set 25℃, bias current at 55mA

2. Operation case temperature -40~70℃

● Typical Data

(λ=1310nm, TC =25 ℃)